International Rectifier ( IR ) introduces the DirectFETplus power MOSFET family, which uses IR 's next-generation silicon technology to provide optimum efficiency for 12V input synchronous buck applications, including next-generation servers, desktops and notebooks. .
The IR F6811 and IRF6894 are the first devices in the new family of DirectFETplus, which have reduced on-resistance (RDS (on)) and gate charge (Qg) compared to their predecessors, resulting in a 2% increase in efficiency. In addition, these devices feature ultra-low gate resistance (Rg) to further increase efficiency by minimizing switching losses in DC-DC converters.
Pan Dawei, vice president of sales for IR Asia Pacific, said: "The new IRF6811 and IRF6894 chipsets use IR's DirectFET packaging technology and use IR's next-generation silicon technology to optimize key MOSFET parameters to deliver superior performance and reliability for next-generation computing needs. And the best solution for small footprints."
The IRF6811 control MOSFET and the IRF6894 synchronous MOSFET are available in small and medium tanks, respectively. The 25V DirectFETplus component combines industry-leading on-resistance and gate charge with low charge to minimize conduction and switching losses. The IRF6894 also features an integrated monolithic Schottky diode that reduces losses due to body diode conduction and reverse recovery. The new DirectFETplus MOSFETs are compatible with the footprint of previous generation devices.
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